September , 2017
Critical Transient Processes of Enhancement-mode GaN HEMTs in High-efficiency and High-reliability Applications
by Lucas (Juncheng) Lu, Guanliang Liu, and Kevin (Hua) Bai published in the CES Transactions on Electrical Machines and Systems, VOL. 1, NO. 3, September 2017

Wide-bandgap devices, such as silicon-carbide metal-oxide-semiconductor field-effect transistors (MOSFETs) and gallium-nitride high electron mobility transistors (HEMTs), exhibit an excellent figure of merits compared to conventional silicon devices. This paper focuses on 650V/30~60A enhancement-mode GaN HEMTs provided by GaN Systems, analytically models its switching behaviors, summarizes the impact of parasitics and dead time, and applies it in two DC/DC converters. Systematic design rules are generated not only for soft switching but also for hard switching applications.

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September , 2016
On-Demand Webinar: Explore the Benefits of Gallium Nitride Power Switching Transistors

This webinar sponsored by RichardsonRFPD and hosted by IEEE GlobalSpec introduces GaN Systems’ products and capabilities, and compares them to other GaN devices and silicon MOSFET devices. Examples in key applications are reviewed.

Overview

GaN Systems introduced Enhancement Mode GaN Transistors to the world in 2014, unveiling both 100V and 650V devices. Since then, the company's GaN technology has been widely adopted across consumer, enterprise, industrial, and transportation markets. This presentation will review the fundamentals of GaN technology and introduce GaN Systems' products and capabilities. Attendees will discover various aspects of the GaN Systems product line including specialized packaging and critical driver specifications. For example, the technology introduced by GaN Systems includes Island Technology® and GaNPX™, products that allow GaN to be used at higher frequencies and higher currents than any other GaN technologies. In addition, attendees will review switching speed, voltage, and current waveforms, efficiencies and thermal specifications, and MTTF data - comparing overall performance and reliability with other GaN and silicon MOSFET devices.

Key Take-Aways

- The basics of GaN transistors
- The applications that benefit from GaN and why
- GaN performance characterization, comparison data, and drive techniques
- Critical driver specifications and industry standard drivers
- GaN reliability and failure modes

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August , 2016
48V Mild Hybrid Systems
Market Needs and Technical Solutions

This presentation from AVL Engineering and Technology looks at the developing 48V mild hybrid market. The powertrains technological and regulatory drivers are reviewed as well as the challenges. This forward-looking analysis projects the market needs through 2020.

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June , 2016
How to Design Power Electronics: HF Power Semiconductor Modeling Webcast

This webinar sponsored by Keysight Technologies and given by Dr. Ingmar Kallfass provides a new workflow for projects that include modeling and characterization of components and devices such as GaN transistors, electro-thermal co-simulation, and integration of GaN into power electronic circuits.

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