July 31st, 2017
Usually the summer months are accompanied by a slowdown in the electronics business. But this summer is an exception to the rule. On the heels of APEC and PCIM, power engineers continue to be inundated with GaN product and industry developments. The number of application articles published about GaN transistors is increasing rather than waning. Not only do we see more articles extolling the beneficial performance of GaN transistors, we also continue to see examples of how customers leverage GaN transistors to push circuitry to higher and higher power levels taking advantage of how GaN increases system power densities, reduces system size and weight, and increases power efficiency. The growth of GaN-enhanced applications is now extending to all market segments.
Very recently an exciting and landmark industry development has occurred. The investment arm of BMW, known as BMW i Ventures, has just made a strategic investment in GaN Systems for reasons that go beyond GaN’s value proposition to the transportation industry. In addition to impacting the electrification of automobiles, GaN also assists the EV and HEV electronic ecosystems, such as wired and wireless charging. To their credit, BMW i Ventures not only recognizes the positive impact that GaN is making on transportation electronics, EVs and HEVs, but they also understand how GaN’s benefits apply to the broader consumer and industrial markets.
For example, as automobile manufacturers build data centers to harvest and process the vast amount of data that autos produce, GaN plays a central role in increasing server power supply efficiency while reducing their size and operating cost. BMW i Ventures views GaN as an instrumental component that will save customers billions of dollars, help to reduce emissions, and enable a more sustainable infrastructure by reducing power consumption.
In October, at the upcoming IEEE Energy Conversion Congress & Expo (ECCE), GaN Systems’ Lucas Lu will present a technical paper, A High Power-Density and High-Efficiency Insulated Metal Substrate Based E-GaN HEMT Power Stage. Lucas will explain how GaNPX bottom-side parts are ideal for mounting onto IMS in any configuration the user needs, such as half-bridges and full bridges, allowing total flexibility in size, shape and power, while facilitating operation at higher power levels than PCBs and providing faster time to market than possible with custom modules. He will also show how GaNPX packaging exhibits better thermal performance than an equivalent TO-247 package. With this approach, engineers can develop systems using IMS and then either stay with IMS modules, or convert to full power modules in production.
ECCE visitors to GaN Systems’ Booth 200 will see examples of how our customers are using GaN transistors in applications such as wireless power transfer, start-stop motors, power modules and many others.
A final teaser: This fall look to GaN Systems to launch a series of informative and practical webinars to help power electronics engineers understand how to design in GaN transistors. If there is a topic you would like us to consider presenting, please let us know.
Enjoy the rest of your summer!
Vice President Sales & Marketing, GaN Systems Inc.
Industry News – July 2017
Share this Newsletter