GaN Systems releases new Application Note highlighting paralleling GaN devices to reach 650V, 240A
October 2016
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GaN transistors exhibit exceptional paralleling capabilities. App Note GN004 is a practical guide to paralleling and layout considerations when designing in high speed GaN HEMT devices. The Note also provides a design example of a 4x paralleled GaN E-HEMT half bridge power stage.

Download App Note GN004 Design considerations of paralleled GaN HEMT.

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