Articles
June 2017
See how GaN E-HEMTs offer significant improvements in power conversion efficiency...especially at higher frequencies. May 2017
To be successful, parallel operation depends on the designer’s ability to deal with parasitic elements within the GaN devices as well as those associated with interfacing circuits. April 2017
Forbes contributor Peter Kelly-Detwiler reports on how sonnen energy storage systems - enabled by GaN transistors - is impacting the procurement, storage and sale of residential electricity. April 2017
An interview with the CEO of GaN Systems, Jim Witham about the use of GaN technology in the power industry. November 2016
Power Electronics Europe reports on the recent advances in gallium nitride transistors, the inroads made across various market segments and the outlook for further adoption. November 2016
Power Electronics Europe editor, Achim Scharf, reflects on electronica 2016 and the impact of electronics, and GaN transistors, on automotive systems. November 2016
AT&S compares ECP versus conventional IC packages and conventional circuit board assembly. Results show ECP helps miniaturization due to higher integration, improved reliability, and excellent thermal performance. 
Press Releases
August 2017
Engineers gain a head-start and design accuracy. July 2017
GaN Systems announces the closing of an investment round led by BMW’s investment arm, BMW i Ventures May 2017
From 70 W to 70 kW, PCIM visitors will see how customers continue to make giant steps in size reduction. May 2017
GaN Systems releases industry’s first E-HEMT bridgeless-totem-pole Power Factor Correction reference design.
Videos
June 2017
In this episode of PSDtv from PCIM Europe 2017, Jim Witham, CEO of GaN Systems discusses benefits of wired and wireless charging using GaN transistors. May 2017
GaN Systems’ CEO, Jim Witham, talks with Electronic Products Magazine about the adoption of GaN technology and the products customers are designing with GaN transistors. April 2017
Power module performance is optimized using GaN transistors when attention is paid to heat transfer and thermal inductance.
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